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| TSM2N7002ED 50V Dual N-Channel Enhancement Mode MOSFET Pin assignment: 1. Source (2) 6. Drain (2) 2. Gate (2) 5. Gate (1) 3. Drain (1) 4. Source (1) VDS = 50V RDS (on), Vgs @ 10V, Ids @ 250mA = 3 RDS (on), Vgs @ 5V, Ids @ 50mA = 4 Features Dual N-channel in package. Advanced trench process technology High density cell design for ultra low on-resistance High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No secondary breakdown Compact and low profile SOT-363 package Ordering Information Part No. TSM2N7002EDCU6 Packing Package T & R (3kpcs/Rell) SOT-363 Block Diagram Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 oC Ta = 75 C Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o Symbol VDS VGS ID IDM PD Limit 50 20 250 1.0 200 150 +150 - 55 to +150 Unit V V mA A mW o o C C Thermal Performance Parameter Lead Temperature (1/8" from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. Symbol TL Rja Limit 5 625 Unit S o C/W TSM2N7002ED 1-5 2004/12 rev. B Electrical Characteristics (Single Channel) Tj = 25 oC unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current Forward Transconductance Conditions Symbol Min Typ Max Unit VGS = 0V, ID = 10uA VGS = 10V, ID = 250mA VGS = 5V, ID = 50mA VDS = VGS, ID = 250uA VDS = 50V, VGS = 0V VGS = 20V, VDS = 0V VDS 7V, VGS = 10V VDS = 7V, ID = 200mA BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS ID(ON) gfs 50 --1.0 --500 80 ---2.0 ----- -3 4 2.5 1.0 100 --- V V uA nA mA mS Dynamic * Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 100mA, VGEN = 10V, RG = 10 TD(ON) tr TD(OFF) tf Ciss Coss Crss -------7.5 6 7.5 3 19 10 3 20 -20 -50 25 5 pF nS Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 115mA, VGS = 0V IS VSD ---0.76 115 1.5 mA V Note : pulse test: pulse width <=300uS, duty cycle <=2% * Guaranteed by design, not subject to production testing. TSM2N7002ED 2-5 2004/12 rev. B Typical Characteristics Curve - Single Channel (Ta = 25 oC unless otherwise noted) Output Characteristic Transfer Characteristics Drain Current (A) Drain to source voltage (V) Drain Current (A) Gate to source voltage (V) Capacitance Drain to source resistance () Rds(on) Variation with Drain Current Capacitance (pF) Drain to source voltage (V) Drain current (A) Vgs(th) with Temperature Gate -source threshold voltage (V) Drain -source breakdown voltage (V) o Junction temperature ( C) Vds breakdown with Temperature Junction temperature (oC) TSM2N7002ED 3-5 2004/12 rev. B Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) Transconductance Variation Source-drain Current (A) Body Diode Forward Voltage Transconductance (S) Drain to source current (A) Body diode forward voltage (V) Gate Charge Gate -source voltage (V) Maximum Safe Operating Area Total gate charge (nC) Drain Current (A) Drain-source voltage (V) Normalized Thermal Transient Impedance Curve Transient thermal impedance r(t) Square wave pulse duration (S) TSM2N7002ED 4-5 2004/12 rev. B SOT-363 Mechanical Drawing DIM A A1 bp C D E e e1 He Lp Q W SOT-363 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 0.80 1.10 0.031 0.043 -0.10 -0.004 0.10 0.30 0.004 0.012 0.10 0.25 0.004 0.010 1.80 2.20 0.071 0.087 1.15 1.35 0.045 0.053 1.30 (typ) 0.052 (typ) 0.65 (typ) 0.026(typ) 2.00 2.20 0.079 0.087 0.10 0.3 0.004 0.012 0.20 (typ) 0.008 (typ) 0.20 (typ) 0.008 (typ) 10o (typ) 10o (typ) TSM2N7002ED 5-5 2004/12 rev. B |
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